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ZXMN10A25G
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
100
—
—
—
—
—
—
0.5
±100
V
μA
nA
V GS = 0V, I D = 250μA
V DS = 100V, V GS = 0V
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
2.0
—
—
—
—
—
—
—
7.3
0.85
4.0
125
150
—
0.95
V
m ?
S
V
V DS = V GS , I D = 250μA
V GS = 10V, I D = 2.9A
V GS = 6.0V, I D = 2.6A
V DS = 15V, I D = 2.9A
V GS = 0V, I S = 4.0A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
C iss
C oss
C rss
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
t rr
Q rr
—
—
—
—
—
—
—
—
—
—
—
—
—
859
57
33
9.6
17
3.8
5.4
4.9
3.7
18
9.4
40.5
62
—
—
—
—
—
—
—
—
—
—
—
?
??
pF
nC
nC
ns
ns
nC
V DS = 50V, V GS = 0V
f = 1.0MHz
V DS = 50V, V GS = 5.0V, I D = 2.9A
V DS = 50V, V GS = 10V, I D = 2.9A
V DS = 50V, V GS = 10V,
I D = 1.0 A ?? R G = 6.0 ?
V GS = 0V, I S = 2.9A,
dI/dt = 100A/ μ s
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
ZXMN10A25G
Document number: DS33568 Rev. 3 - 2
3 of 7
www.diodes.com
April 2014
? Diodes Incorporated
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